Method of processing a substrate using an ion beam and apparatus for performing the same

ABSTRACT

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

CROSS-RELATED APPLICATION

This application is a continuation application of U.S. Ser. No.15/606,025, filed on May 26, 2017 which claims priority under 35 U.S.C.§ 119 from Korean Patent Application No. 2017-0002342, filed on Jan. 6,2017 in the Korean Intellectual Property Office (KIPO), the contents ofwhich are herein incorporated by reference in their entirety.

BACKGROUND 1. Field

Example embodiments relate to a method of processing a substrate usingan ion beam and an apparatus for performing the same. More particularly,example embodiments relate to a method of etching a layer on a substrateor forming a layer on a substrate using an ion beam, and an apparatusfor performing the method.

2. Description of the Related Art

In an etching method using an ion beam, ions in plasma generated in aplasma chamber may pass through grids to be converted, or collimated,into an ion beam. The ion beam may process a substrate in asubstrate-processing chamber.

One or more of the grids, particularly a grid closest to plasmagenerator may be heated by heat of the plasma and may expand. Suchexpansion may lead to an increase in the gap between the grids. As aresult, characteristics of the ion beams passing through openingsbetween the grids may be changed so that an etching rate may not beuniformly maintained. Because it may be difficult to prevent theexpansion of the grid, recipes of a substrate-processing process may beset based on the expansion of the grid. That is, substrate processingmay pre-compensate for grid expansion and, as a result, substrateprocessing may be delayed until the grid is expanded.

According to related arts, a dummy substrate may be placed in thesubstrate-processing chamber and a plasma generated to pre-heat andpre-expand the grid prior to substrate processing.

However, the time required to pre-heat the grid using the plasma may beexcessive and the process for generating the plasma may be complicated.As a result, employing a pre-heated grid using the dummy substrate maydecrease the yield of a semiconductor device.

SUMMARY

Example embodiments in accordance with principles of inventive conceptsprovide a method and apparatus for processing a substrate using an ionbeam that may be capable of rapidly pre-heating a grid.

According to example embodiments, there may be provided a method ofprocessing a substrate using an ion beam. In the method of processingthe substrate using the ion beam, a first grid, which may be adjacent toa plasma chamber, among first to third grids between the plasma chamberand a substrate-processing chamber may be pre-heated using a radiantheater. A plasma may be generated in the plasma chamber. Ions in theplasma may be accelerated toward the first to third grids to form ionbeams. The substrate in the substrate-processing chamber may beprocessed using the ion beam.

According to example embodiments, there may be provided an apparatus forprocessing a substrate using an ion beam. The apparatus may include aplasma chamber, a substrate-processing chamber, first to third grids,and a heater. A plasma may be generated in the plasma chamber. Thesubstrate-processing chamber may be connected with the plasma chamber.The substrate-processing chamber may be configured to receive thesubstrate. The first to third grids may be arranged between the plasmachamber and the substrate-processing chamber. The heater may beconfigured to heat the first grid, nearest the plasma chamber, among thefirst to third grids.

According to example embodiments, the first grid adjacent to the plasmachamber may be heated using radiant heat so that the time forpre-heating the first grid may be greatly reduced, thereby eliminatingthe need for a dummy substrate employed while prehearing the grid at arelatively slow rate using the plasma so that yield and throughput ofsemiconductor devices may be improved.

In an example embodiment a method of processing a substrate includesforming a plasma in a plasma chamber, using charged grids to form an ionbeam and to thereby accelerate ions from the plasma chamber to aprocessing chamber and using an auxiliary heater to pre-heat a grid to asaturation state.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 20 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a cross-sectional view illustrating an ion beam etchingapparatus in accordance with example embodiments;

FIG. 2 is an enlarged cross-sectional view illustrating a grid and aheater of the ion beam etching apparatus in FIG. 1;

FIGS. 3 to 5 are cross-sectional views illustrating an ion beam etchingmethod using the ion beam etching apparatus in FIG. 1;

FIG. 6 is a cross-sectional view illustrating an ion beam etchingapparatus in accordance with example embodiments;

FIG. 7 is an enlarged cross-sectional view illustrating a grid and aheater of the ion beam etching apparatus in FIG. 6;

FIGS. 8 to 10 are cross-sectional views illustrating an ion beam etchingmethod using the ion beam etching apparatus in FIG. 6;

FIG. 11 is a cross-sectional view illustrating an ion beam etchingapparatus in accordance with example embodiments;

FIGS. 12 to 15 are cross-sectional views illustrating an ion beametching method using the ion beam etching apparatus in FIG. 11;

FIG. 16 is a cross-sectional view illustrating an ion beam etchingapparatus in accordance with example embodiments; and

FIGS. 17 to 20 are cross-sectional views illustrating an ion beametching method using the ion beam etching apparatus in FIG. 16.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, example embodiments will be explained in detail withreference to the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating an example embodiment ofan ion beam etching apparatus in accordance with principles of inventiveconcepts, and FIG. 2 is an enlarged cross-sectional view illustrating agrid and a heater of the ion beam etching apparatus in FIG. 1.

Referring to FIGS. 1 and 2, an example embodiment of an apparatus forprocessing a substrate using an ion beam in accordance with principlesof inventive concepts may include an etching apparatus. The etchingapparatus may be configured to etch a layer on the substrate W using theion beam.

The etching apparatus may include a plasma chamber 110, an etchingchamber 120, a substrate holder 130, an exhaust line 140, a gridstructure 150, an RF coil 160, a magnet 170, a heater 180 and a lens190. Heater 180 may be referred to herein as an auxiliary, orsupplemental, heater, in that conventional apparatus do not include sucha heater but, rather, generate a plasma to pre-heat the grid while adummy substrate is in the processing chamber.

The plasma chamber 110 may include a receiving portion 114. Thereceiving portion 114 may be formed at a central portion of a rearsurface of the plasma chamber 110 opposite to the etching chamber 120.The receiving portion 114 may have a cylindrical shape.

A gas inlet line 112 may be connected to the plasma chamber 110. Anetching gas may be introduced into the plasma chamber 110 through thegas inlet line 112.

The RF coil 160 may be configured to surround an outer surface of theplasma chamber 110. The RF coil 160 may be electrically connected with apower source and may form, or generate, a high frequency electric fieldfor generating plasma in the plasma chamber 110.

The magnet 170 may be arranged in the receiving portion 114 of theplasma chamber 110 and may uniformly distribute the plasma generated bythe RF coil 160. The distribution of the plasma may be controlled bycontrolling the amount of a current supplied to the magnet 170, forexample.

The etching chamber 120 may communicate with the plasma chamber 110. Thesubstrate holder 130 may be arranged in the etching chamber 120 and mayhave a pivotal structure for inclining the substrate W with respect toan irradiation direction of the ion beam. The substrate holder 130 mayinclude an electrostatic chuck (ESC).

The exhaust line 140 may be connected to the etching chamber 120.Byproducts generated in an etching process may be exhausted from theetching chamber 120 through the exhaust line 140. Because the substrateholder 130 may be downwardly slanted, the exhaust line 140 may beconnected to an upper surface of the etching chamber 120 in order toprevent flows of the ion beam from being influenced by vacuum suppliedfrom the exhaust line 140.

The grid structure 150 may be arranged between the plasma chamber 110and the etching chamber 120. In example embodiments, the grid structure150 may include a first grid 152, a second grid 154 and a third grid156. The first grid 152 may be adjacent to the plasma chamber 110. Thethird grid 156 may be adjacent to the etching chamber 120. The secondgrid 154 may be arranged between the first grid 152 and the third grid156.

The first grid, 152, the second grid 154 and the third grid 156 may befixed to clamping plates 122. The clamping plates 122 may be positionedat both ends of the first to third grids 152, 154 and 156 and, in thismanner, both ends of the first to third grids 152, 154 and 156 may befixed to the clamping plates 122.

In example embodiments, the first to third grids 152, 154 and 156 mayhave substantially the same size. A first gap G1 between the first grid152 and the second grid 154 may be substantially the same as a secondgap G2 between the second grid 154 and the third grid 156.

The first grid 152 and the second grid 154 may be electrically connectedto a power source. In example embodiments, the first grid 152 may beconnected to an anode and the second grid 154 may be connected to acathode. The third grid 156 may be grounded. The first to third grids152, 154 and 156 may include, respectively, first to third holes 153,155 and 157 through which the ion beams may pass. The first to thirdholes 153, 155 and 157 may have substantially the same size. The firstto third holes 153, 155 and 157 may be arranged in substantially thesame axial direction.

The heater 180 may be arranged in the receiving portion 114 of theplasma chamber 110 and may be arranged between the magnet 170 and thefirst grid 152. The ion beam etching apparatus may be idly driven beforeperforming the etching process and the heater 180 may pre-heat the gridstructure 150, particularly the first grid 152 adjacent to the plasmachamber 110, using radiant heat. The radiant heat may be more rapidlytransferred to the first grid 152 than plasma heating. Therefore, inexample embodiments, the first grid 152 may rapidly heated to asaturation temperature using radiant heat, rather than plasma heating.The term, “saturation state” may also be used herein to refer to a stateat which the grid reaches a point beyond which it distorts no furtherdue to heating. The use of “state” makes explicit what the use of“temperature” implies: that the grid may be at the saturationtemperature for some period of time before temperature-induceddistortion is complete.

Ion beams that pass through a central portion of the grid structure 150may provide the bulk of etching of the layer on the substrate W fixed tothe substrate holder 130. That is, ion beams passing through an edgeportion of the grid structure 150 may provide little or none of theetching of the layer on the substrate W. As a result, an etchinguniformity may be determined by characteristics of the ion beams passingthrough the central portion of the grid structure 150.

In example embodiments the heater 180 may be arranged in the receivingportion 114 at the central portion of the plasma chamber 110 and, as aresult, the heater 180 may concentratedly pre-heat a central portion ofthe first grid 152. In particular, the heater 180 may radiantly pre-heatthe central portion of the first grid 152 to the saturation temperature,the temperature at which the expansion of the first grid 152 stops. Thesaturation temperature may vary in accordance with a material of thefirst grid 152.

Because both ends of the first grid 152 may be fixed to the clampingplates 122, the first grid 152 pre-heated by the heater 180 may beexpanded and the central portion of the first grid 152 may be slightlyprotruded toward the heater 180. As a result of this protrusion, orcupping, the gap between the central portion of the first grid 152 and acentral portion of the second grid 154 may be greater than the gapbetween an edge portion of the first grid 152 and an edge portion of thesecond grid 154. In order to compensate for the distortion of the firstgrid, etching recipes may be based on the shape of the first grid 152,after expansion. In example embodiments in accordance with principles ofinventive concepts, the thermal expansion rate of the first grid 152 atthe saturation temperature are taken into account, the distortion of thefirst grid 152 resulting from heating is determined, and the distortionof first grid 152 is taken into account in etching recipes in order topre-compensate for the distortion. In accordance with principles ofinventive concepts, heater 180 may be used to pre-heat the first grid152 using radiant heat in order to expand, or distort, the first grid152 into a shape for which an etching recipe has been developed.

In example embodiments, the heater 180 may include a halogen lamp orother heating element configured to generate the requisite radiant heat.

In example embodiments, the lens 190 may be arranged between the heater180 and the first grid 152. The lens 190 may be configured to diffusethe radiant heat generated from the heater 180 toward the first grid 152in order to uniformly transfer the radiant heat from the heater 180 tothe central portion of the first grid 152. In example embodiments thelens 190 may include a concave lens configured to diffuse the heat.

FIGS. 3 to 5 are cross-sectional views illustrating an exampleembodiment of an ion beam etching method using the ion beam etchingapparatus in FIG. 1.

Referring to FIG. 3, the etching recipes may be set based on the thermalexpansion of the first grid 152. That is, the etching recipes may be setunder a condition that the first gap G1 between the first grid 152 andthe second grid 154 may be wider than the second gap G2 between thesecond grid 154 and the third grid 156. In example embodiments inaccordance with principles of inventive concepts, etching recipes maycompensate for the gap G1 being wider than the gap G2 and may also takeinto account the curvature of first grid 152 that results from thermalexpansion.

The substrate W on which the layer may be formed may be fixed to thesubstrate holder 130. Before performing the etching process, the heater180 may pre-heat the central portion of the first grid 152 up to thesaturation temperature, using the radiant heat from heater 180. Theradiant heat generated from the heater 180 may be diverged by the lens190 in order to uniformly distribute radiant heat over the centralportion of the first grid 152.

As a result of the heating, the central portion of the first grid 152may be slightly protruded toward the heater 180; the first gap G1between the expanded first grid 152 and the second grid 154 may becomewider than the second gap G2 between the second grid 154 and the thirdgrid 156; and, in accordance with principles of inventive concepts, theetching recipes may be set based on the expanded shape of the first grid152 in order to precompensate for the thermal distortion of the firstgrid 152.

Referring to FIG. 4, the heater 180 may be stopped after the first grid152, or, at least, the central portion of the first grid 152, hasreached the saturation temperature. A source gas may then be introducedinto the plasma chamber 110 through the gas inlet line 112 and highfrequency power may be applied to the RF coil 160 to generate the plasmain the plasma chamber 110 from the source gas. Because the first grid152 has already been heated to the saturation temperature and is fullyexpanded, the process need not wait for the first grid 152 to beexpanded by the slower process of heating from the plasma.

Referring to FIG. 5, ions in the plasma may be accelerated toward thecharged grid structure 150. The ions may pass through the holes 153, 155and 157 in the grid structure 150 to be converted into the ion beams Theion beams may be irradiated to the layer on the substrate W fixed to thesubstrate holder 130 to etch the layer.

Byproducts generated in the etching process may be exhausted from theetching chamber 120 through the exhaust line 140.

FIG. 6 is a cross-sectional view illustrating an example embodiment ofan ion beam etching apparatus in accordance with principles of inventiveconcepts, and FIG. 7 is an enlarged cross-sectional view illustrating agrid and a heater of the ion beam etching apparatus in FIG. 6.

An etching apparatus using an ion beam in accordance with this exampleembodiment may include elements substantially the same as those of theetching apparatus in FIG. 1 except for a grid structure. Thus, the samereference numeral may refer to the same elements and any furtherillustrations with respect to the same elements may not be repeatedherefor brevity and clarity of description.

Referring to FIGS. 6 and 7, a first gap G1 between the first grid 152and the second grid 154 may be narrower than a second gap G2 between thesecond grid 154 and the third grid 156.

The heater 180 may pre-heat the central portion of the first grid 152 tothe saturation temperature using radiant heat and the central portion ofthe first grid 152 may be expanded so that a gap between the centralportion of the first grid 152 and the central portion of the second grid154 may be substantially the same as a gap between the central portionof the second grid 154 and the central portion of the third grid 156.

As previously described, the ion beams employed in the etching process,may correspond, predominantly, to the ion beams passing through thecentral portion of the grid structure 150. Thus, in this exampleembodiment, although a gap between the edge portion of the first grid152 and the edge portion of the second grid 154 may be narrower than agap between the edge portion of the second grid 154 and the edge portionof the third grid 156, the gap between the pre-heated central portion ofthe first grid 152 and the central portion of the second grid 154 may besubstantially the same as the gap between the central portion of thesecond grid 154 and the central portion of the third grid 156, As aresult, etching uniformity may be improved.

In this example embodiment, etching recipes may be set assuming that thefirst gap G1 between the first grid 152 and the second grid 154 may besubstantially the same as the second gap G2 between the second grid 154and the third grid 156.

FIGS. 8 to 10 are cross-sectional views illustrating an ion beam etchingmethod using the ion beam etching apparatus in FIG. 6.

Referring to FIG. 8, the etching recipes may be set assuming that thefirst gap G1 between the first grid 152 and the second grid 154 may besubstantially the same as the second gap G2 between the second grid 154and the third grid 156.

The substrate W on which the layer may be formed may be fixed to thesubstrate holder 130 and, before performing the etching process, theheater 180 may pre-heat the central portion of the first grid 152 to thesaturation temperature using radiant heat. The radiant heat generated bythe heater 180 may be diverged by the lens 190 in order to uniformlytransfer heat to the central portion of the first grid 152.

As a result of the heating by heater 180, the central portion of thefirst grid 152 may be slightly protruded toward the heater 180 and thefirst gap G1 between the expanded first grid 152 and the second grid 154may be substantially the same as the second gap G2 between the secondgrid 154 and the third grid 156. In accordance with principles ofinventive concepts, the etching recipes may be set based on the expandedshape of the first grid 152.

Referring to FIG. 9, the heater 180 may be stopped after the first grid,or, at least, the central portion of the first grid, 152 has reached thesaturation temperature. A source gas may then be introduced into theplasma chamber 110 through the gas inlet line 112 and high frequencypower may be applied to the RF coil 160 to generate the plasma in theplasma chamber 110 from the source gas. Because the first grid 152 hasalready been heated to the saturation temperature and is fully expanded,the process need not wait for the first grid 152 to be expanded by theslower process of heating from the plasma.

Referring to FIG. 10, ions in the plasma may be accelerated toward thecharged grid structure 150. The ions may pass through the holes 153, 155and 157 in the grid structure 150 to be converted into the ion beams Theion beams may be irradiated to the layer on the substrate W fixed to thesubstrate holder 130 to etch the layer.

Byproducts generated in the etching process may be exhausted from theetching chamber 120 through the exhaust line 140.

FIG. 11 is a cross-sectional view illustrating an example embodiment ofan ion beam etching apparatus in accordance with principles of inventiveconcepts.

Referring to FIG. 11, an apparatus for processing a substrate using anion beam in accordance with this example embodiment may include adeposition apparatus that may be configured to deposit a layer on thesubstrate W using the ion beam.

The deposition apparatus may include a plasma chamber 210, a receivingportion 214, a deposition chamber 220, clamping plates 222, a targetholder 235, a substrate holder 230, an exhaust line 240, a gridstructure 250, an RF coil 260, a magnet 270, a heater 280 and a lens290.

The plasma chamber 210, the receiving portion 214, the depositionchamber 220, the clamping plates 222, the grid structure 250, the RFcoil 260, the magnet 270, the heater 280 and the lens 290 in FIG. 11 mayhave functions and a structure substantially the same as those of theplasma chamber 110, the etching chamber 120, the grid structure 150, theRF coil 160, the magnet 170, the heater 180 and the lens 190,respectively. Thus, any further illustrations with respect to the plasmachamber 210, the deposition chamber 220, the grid structure 250, the RFcoil 260, the magnet 270, the heater 280 and the lens 290 in FIG. 11 maynot be repeated here, for brevity and clarity of explanation.

The target holder 235 may be arranged on a side surface of thedeposition chamber 220 and may be downwardly slanted. A target T may befixed to the target holder 235. The substrate holder 230 may be arrangedon a bottom surface of the deposition chamber 220. The ion beams may beirradiated to the target T on the target holder 235. Materials releasedfrom the target T may be deposited on the substrate W on the substrateholder 230.

The exhaust line 240 may be connected to the deposition chamber 220.Because the target holder 235 may be downwardly slanted, the exhaustline 240 may be connected to an upper surface of the deposition chamber220 so as to prevent flows of the ion beam from being influenced byvacuum supplied from the exhaust line 240.

FIGS. 12 to 15 are cross-sectional views illustrating an exampleembodiment of an ion beam etching method using the ion beam etchingapparatus in FIG. 11.

Referring to FIG. 12, the deposition recipes may be set based on thethermal expansion of the first grid 252. That is, the deposition recipesmay be set under a condition that the first gap G1 between the firstgrid 252 and the second grid 254 may be wider than the second gap G2between the second grid 254 and the third grid 256. In exampleembodiments in accordance with principles of inventive concepts, etchingrecipes may compensate for gap G1 being wider than gap G2 and may alsotake into account the curvature of first grid 252 that results fromthermal expansion

The target T may be fixed to the target holder 235. The substrate W onwhich the layer may be formed may be fixed to the substrate holder 230.Before performing the deposition process, the heater 280 may pre-heatthe central portion of the first grid 252 up to the saturationtemperature, using the radiant heat from the heater 280. The radiantheat generated from the heater 280 may be diverged by the lens 290 inorder to uniformly distribute radiant heat over the central portion ofthe first grid 252.

As a result of the heating, the central portion of the first grid 252may be slightly protruded toward the heater 280; the first gap G1between the expanded first grid 252 and the second grid 254 may becomewider than the second gap G2 between the second grid 254 and the thirdgrid 256; and, in accordance with principles of inventive concepts, thedeposition recipes may be set based on the expanded shape of the firstgrid 252 in order to precompensate for the thermal distortion of firstgrid 252.

Referring to FIG. 13, the heater 280 may be stopped after the first grid252, or, at least, the central portion of the first grid 252, hasreached the saturation temperature. A source gas may then be introducedinto the plasma chamber 210 through the gas inlet line 212 and highfrequency power may be applied to the RF coil 260 to generate the plasmain the plasma chamber 210 from the source gas. Because the first grid252 has already been heated to the saturation temperature and is fullyexpanded, the process need not wait for the first grid 252 to beexpanded by the slower process of heating from the plasma.

Referring to FIG. 14, ions in the plasma may be accelerated toward thecharged grid structure 250. The ions may pass through the holes in thegrid structure 250 to be converted into the ion beams The ion beams maybe irradiated to the target T on the target holder 235 so that thematerials may be released from the target T.

Referring to FIG. 15, the materials released from target T may bedeposited on the substrate W on the substrate holder 230. Byproductsgenerated in the deposition process may be exhausted from the depositionchamber 220 through the exhaust line 240.

FIG. 16 is a cross-sectional view illustrating example embodiment of anion beam etching apparatus in accordance with principles of inventiveconcepts.

Referring to FIG. 16, a first gap G1 between the first grid 252 and thesecond grid 254 may be narrower than a second gap G2 between the secondgrid 254 and the third grid 256.

The heater 280 may pre-heat the first grid 252, or, at least, thecentral portion of the first grid 252 to the saturation temperatureusing radiant heat. Thus, the pre-heated central portion of the firstgrid 252 may be expanded so that a gap between the central portion ofthe first grid 252 and the central portion of the second grid 254 may besubstantially the same as a gap between the central portion of thesecond grid 254 and the central portion of the third grid 256.

As previously described, the ion beams employed in the depositionprocess may correspond, predominantly, to the ion beams passing throughthe central portion of the grid structure 250. Thus, in this exampleembodiment, although a gap between the edge portion of the first grid252 and the edge portion of the second grid 254 may be narrower than agap between the edge portion of the second grid 254 and the edge portionof the third grid 256, the gap between the pre-heated central portion ofthe first grid 252 and the central portion of the second grid 254 may besubstantially the same as the gap between the central portion of thesecond grid 254 and the central portion of the third grid 256. As aresult, the layer deposited on the substrate W may have a uniformthickness.

In this example embodiment, deposition recipes may be set assuming thatthe first gap G1 between the first grid 252 and the second grid 254 maybe substantially the same as the second gap G2 between the second grid254 and the third grid 256.

FIGS. 17 to 20 are cross-sectional views illustrating an exampleembodiment of an ion beam etching method using the ion beam etchingapparatus in FIG. 16.

Referring to FIG. 17, the deposition recipes may be set assuming thatthe first gap G1 between the first grid 252 and the second grid 254 maybe substantially the same as the second gap G2 between the second grid254 and the third grid 256.

The target T may be fixed to the target holder 235. The substrate W onwhich the layer may be formed may be fixed to the substrate holder 230and, before performing the deposition process, the heater 280 maypre-heat the central portion of the first grid 252 to the saturationtemperature using radiant heat. The radiant heat generated by the heater180 may be diverged by the lens 290 in order to uniformly transfer heatto the central portion of the first grid 252.

As a result of the heating by heater 280, the central portion of thefirst grid 252 may be slightly protruded toward the heater 280 and thefirst gap G1 between the expanded first grid 252 and the second grid 254may be substantially the same as the second gap G2 between the secondgrid 254 and the third grid 256. In accordance with principles ofinventive concepts, deposition recipes may be set based on the expandedshape of the first grid 252.

Referring to FIG. 18, the heater 280 may be stopped after the first grid252, or, at least, the central portion of the first grid 252, hasreached the saturation temperature. A source gas may then be introducedinto the plasma chamber 210 through the gas inlet line 212 and highfrequency power may be applied to the RF coil 260 to generate the plasmain the plasma chamber 210 from the source gas. Because the first grid252 has already been heated to the saturation temperature and is fullyexpanded, the process need not wait for the first grid 252 to beexpanded by the slower process of heating from the plasma.

Referring to FIG. 19, ions in the plasma may be accelerated toward thecharged grid structure 250. The ions may pass through the holes in thegrid structure 250 to be converted into the ion beams The ion beams maybe irradiated to the target T on the target holder 235 so that thematerials may be released from the target T.

Referring to FIG. 20, the materials may be deposited on the substrate Won the substrate holder 230. Byproducts generated in the depositionprocess may be exhausted from the deposition chamber 220 through theexhaust line 240.

According to example embodiments, the first grid adjacent to the plasmachamber may be heated using radiant heat so that the time forpre-heating the first grid may be greatly reduced, when compared to aprocess that relies upon plasma heating the first grid. As a result, aprocess for pre-heating the first grid using a dummy substrate and theplasma may not be required and the yield and throughput of semiconductordevices may be improved.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concepts. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcepts as defined in the claims. In the claims, means-plus-functionclauses are intended to cover the structures described herein asperforming the recited function and not only structural equivalents butalso equivalent structures. Therefore, it is to be understood that theforegoing is illustrative of various example embodiments and is not tobe construed as limited to the specific example embodiments disclosed,and that modifications to the disclosed example embodiments, as well asother example embodiments, are intended to be included within the scopeof the appended claims.

What is claimed is:
 1. An apparatus for processing a substrate using ion beams, the apparatus comprising: a plasma chamber configured to generate a plasma, the plasma chamber having a first end and a second end; a substrate-processing chamber connected with the plasma chamber and configured to receive a substrate; first to third grids arranged between the plasma chamber and the substrate-processing chamber, with the first grid nearest the plasma chamber, the third grid nearest the processing chamber and the second grid between the first and third grids; and an auxiliary heater positioned in the plasma chamber between the first end of the plasma chamber and the first grid to pre-heat the first grid, using a radiant heat.
 2. The apparatus of claim 1, wherein a gap between the first grid and the second grid is substantially the same as a gap between the second grid and the third grid, and the auxiliary heater is configured to pre-heat a central portion of the first grid to widen a gap between the central portion of the first grid and a central portion of the second grid.
 3. The apparatus of claim 1, wherein a gap between the first grid and the second grid is narrower than a gap between the second grid and the third grid, and the auxiliary heater is configured to pre-heat a central portion of the first grid to equalize a gap between the central portion of the first grid and a central portion of the second grid with a gap between an edge portion of the first grid and an edge portion of the second grid.
 4. The apparatus of claim 1, further comprising a lens arranged between the auxiliary heater and the first grid to diverge the radiant heat directed toward the first grid.
 5. The apparatus of claim 1, further comprising a substrate holder arranged in the substrate-processing chamber to hold the substrate for etching by the ion beams.
 6. The apparatus of claim 1, further comprising: a target holder arranged in the substrate-processing chamber to hold a target to which the ion beams are irradiated; and a substrate holder arranged in the substrate-processing chamber to hold the substrate to receive materials released from the target to thereby deposit the materials on the substrate. 